Micropac Industries_61055-005
Micropac Industries_61055-005
Micropac Industries

61055-005

Sensors
Micropac Industries
61055-005
54-61055-005
Phototransistor Module Silicon 2-Pin
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Tech Specifications

Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
EA
Maximum Collector-Emitter Voltage (V)
50
ECCN (US)
3A001a.2.c.
PPAP
Unknown
Maximum Power Dissipation (mW)
50
Automotive
Unknown
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
125
Phototransistor Type
Phototransistor
Package Height
2.92(Max)
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Supplier Unconfirmed
Maximum Dark Current (nA)
25
Diameter
1.55(Max)
Maximum Rise Time (ns)
20000
Maximum Fall Time (ns)
20000
Material
Silicon
Maximum Emitter-Collector Voltage (V)
7
Pin Count
2
Mounting
Through Hole
Type
Module
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
24
Part Status
Unconfirmed
Maximum Light Current (uA)
20000

61055-005 Documents

Download datasheets 61055-005

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