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ams OSRAM
BP 103-3/4
Sensors
BP 103-3/4
54-BP 103-3/4
PHOTOTRANSISTOR NPN 850NM TO-18
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.007055 oz
Fabrication Technology
NPN Transistor
PPAP
No
Fall Time
7 us, 9 us
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
35 V
RoHS
RoHS Compliant
Automotive
No
Tradename
Metal Can
Supplier Package
TO-18
Package / Case
TO-206AA, TO-18-3 Metal Can
REACH Status
REACH Unaffected
Maximum Collector-Emitter Saturation Voltage (V)
0.15
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
850 nm
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Operating Temperature
-40°C ~ 80°C (TA)
Current - Collector (Ic) (Max)
100 mA
Maximum Collector Current (mA)
100
Maximum Fall Time (ns)
7000/9000
ECCN
EAR99
Orientation
Top View
Mounting Type
Through Hole
Standard Package Name
TO
Wavelength
850nm
Pin Count
3
Mounting
Through Hole
Lens Color/Style
Transparent
Rise Time
7 us, 9 us
Viewing Orientation
Top View
Lead Shape
Through Hole
Peak Wavelength (nm)
850
HTSUS
8541.49.7080
Package
Bulk
Lens Color
Transparent
USHTS
8541497080
Maximum Light Current (uA)
600/950
Maximum On-State Collector Current
100 mA
PCB changed
3
HTS
8541.49.70.40
Viewing Angle
110°
Maximum Collector-Emitter Voltage (V)
35
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
150
Current - Dark (Id) (Max)
50 nA
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
80
Phototransistor Type
Phototransistor
Package Height
3.6(Max)
Mfr
ams-OSRAM USA INC.
Polarity
NPN
Height
3.6 mm
Maximum Operating Temperature
+ 80 C
Maximum Dark Current (nA)
50
Width
5.5 mm
Diameter
5.5(Max)
RoHS Status
ROHS3 Compliant
Maximum Rise Time (ns)
7000/9000
Material
Silicon
Minimum Operating Temperature
- 40 C
Series
BP 103
Type
Chip
Half Intensity Angle Degrees (°)
110
Length
5.5 mm
Power - Max
150 mW
Half Intensity Angle Degrees
55 deg
Part Status
Active
Pd - Power Dissipation
150 mW
Dark Current
50 nA
Base Product Number
BP 103
BP 103-3/4 Documents
Download datasheets BP 103-3/4
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