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BP103-3/4-Z
Sensors
BP103-3/4-Z
54-BP103-3/4-Z
Phototransistor Chip Silicon 850nm 3-Pin TO-18
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
3
Maximum Collector-Emitter Voltage (V)
35
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
150
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
80
Supplier Package
TO-18
Phototransistor Type
Phototransistor
Package Height
3.6(Max)
Maximum Collector-Emitter Saturation Voltage (V)
0.15
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
50
Diameter
5.5(Max)
Maximum Rise Time (ns)
7000/9000
Maximum Collector Current (mA)
100
Maximum Fall Time (ns)
7000/9000
Material
Silicon
Standard Package Name
TO
Pin Count
3
Mounting
Through Hole
Type
Chip
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
110
Lead Shape
Through Hole
Peak Wavelength (nm)
850
Lens Color
Transparent
Maximum Light Current (uA)
600/950
BP103-3/4-Z Documents
Download datasheets BP103-3/4-Z
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