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BPW17N
Sensors
BPW17N
54-BPW17N
Phototransistor Chip Silicon 825nm 2-Pin T-3/4
In Stock : 14778
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.003527 oz
Fabrication Technology
NPN Transistor
Light Current
1 mA
Product
Phototransistors
PPAP
No
RoHS
RoHS Compliant
Automotive
No
Supplier Package
T-3/4
Package / Case
T-3/4
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
825 nm
Collector-Emitter Breakdown Voltage
32 V
Maximum Collector Current (mA)
50
ECCN
EAR99
Wavelength
825 nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Lens Color/Style
Water Clear
Viewing Orientation
Top View
Peak Wavelength (nm)
825
Collector- Emitter Voltage VCEO Max
32 V
Package
Bulk
Lens Color
Water Clear
USHTS
8541497080
Maximum Light Current (uA)
1000(Typ)
Maximum On-State Collector Current
50 mA
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
32
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
100
Maximum Operating Temperature (°C)
100
Phototransistor Type
Phototransistor
Package Height
2.9
Collector-Emitter Saturation Voltage
300 mV
Polarity
NPN
Height
2.9 mm
Maximum Operating Temperature
+ 100 C
Maximum Dark Current (nA)
200
Width
2.4 mm
Mounting Style
Through Hole
Material
Silicon
Package Length
3.3
Minimum Operating Temperature
- 40 C
Type
Chip
Half Intensity Angle Degrees (°)
24
Length
3.3 mm
Half Intensity Angle Degrees
12 deg
Part Status
Active
Package Width
2.4
Pd - Power Dissipation
100 mW
Dark Current
200 nA
BPW17N Documents
Download datasheets BPW17N
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