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BPW77NB
Sensors
BPW77NB
54-BPW77NB
Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA Bulk
In Stock : 737
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.010582 oz
Fabrication Technology
NPN Transistor
Light Current
10 mA
Product
Phototransistors
PPAP
No
RoHS
RoHS Compliant
Automotive
No
Supplier Package
TO-206AA
Package / Case
TO-18
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
850 nm
Collector-Emitter Breakdown Voltage
70 V
Maximum Collector Current (mA)
50
ECCN
EAR99
Standard Package Name
TO
Wavelength
850 nm
Pin Count
3
Mounting
Through Hole
Lens Color/Style
Clear
Viewing Orientation
Top View
Lead Shape
Through Hole
Peak Wavelength (nm)
850
Collector- Emitter Voltage VCEO Max
70 V
Package
Bulk
USHTS
8541497080
Maximum Light Current (uA)
20000(Typ)
Maximum On-State Collector Current
50 mA
PCB changed
3
HTS
COMPONENTS
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
250
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Phototransistor Type
Phototransistor
Package Height
6.15
Collector-Emitter Saturation Voltage
150 mV
Polarity
NPN
Height
6.15 mm
Maximum Operating Temperature
+ 125 C
Maximum Dark Current (nA)
100
Width
5.5 mm
Diameter
5.5
Mounting Style
Through Hole
Material
Silicon
Minimum Operating Temperature
- 40 C
Type
IR Chip
Half Intensity Angle Degrees (°)
20
Length
5.5 mm
Half Intensity Angle Degrees
10 deg
Part Status
Active
Pd - Power Dissipation
250 mW
Dark Current
100 nA
BPW77NB Documents
Download datasheets BPW77NB
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