Vishay_BPW85
Vishay_BPW85
Vishay

BPW85

Sensors
Vishay
BPW85
54-BPW85
Phototransistor Chip Silicon 850nm 2-Pin T-1
In Stock : 2339

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Tech Specifications

Number of Channels per Chip
1
Unit Weight
0.005397 oz
Fabrication Technology
NPN Transistor
Light Current
800 uA
Product
Phototransistors
PPAP
No
Fall Time
2.3 us
RoHS
RoHS Compliant
Automotive
No
Supplier Package
T-1
Package / Case
T-1
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
850 nm
Collector-Emitter Breakdown Voltage
70 V
Maximum Collector Current (mA)
50
ECCN
EAR99
Wavelength
850 nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Rise Time
2 us
Viewing Orientation
Top View
Lead Shape
Through Hole
Peak Wavelength (nm)
850
Collector- Emitter Voltage VCEO Max
70 V
Package
Bulk
Lens Color
Clear
USHTS
8541498000
Maximum On-State Collector Current
50 mA
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
100
Minimum Operating Temperature (°C)
-40
Phototransistor Type
Phototransistor
Package Height
4.5
Collector-Emitter Saturation Voltage
300 mV
Polarity
NPN
Maximum Operating Temperature
+ 100 C
Maximum Dark Current (nA)
200
Diameter
3.4
Material
Silicon
Minimum Operating Temperature
- 40 C
Type
Chip
Half Intensity Angle Degrees (°)
50
Half Intensity Angle Degrees
25 deg
Part Status
Active
Pd - Power Dissipation
100 mW
Dark Current
200 nA

BPW85 Documents

Download datasheets BPW85

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