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CEB14A04
AC DC DC Modules
CEB14A04
55-CEB14A04
Transistor
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Tech Specifications
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Configuration
SINGLE WITH BUILT-IN DIODE
Transistor Element Material
SILICON
Turn-on Time-Max (ton)
104 ns
Operating Temperature-Min
-55 °C
Surface Mount
YES
Turn-off Time-Max (toff)
234 ns
Drain Current-Max (ID)
180 A
Drain-source On Resistance-Max
0.005 Ω
Terminal Position
SINGLE
JESD-30 Code
R-PSSO-G2
DS Breakdown Voltage-Min
40 V
Package Shape
RECTANGULAR
Terminal Form
GULL WING
Operating Mode
ENHANCEMENT MODE
Number of Elements
1
ECCN Code
EAR99
Case Connection
DRAIN
Pulsed Drain Current-Max (IDM)
720 A
Avalanche Energy Rating (Eas)
633 mJ
JEDEC-95 Code
TO-263AB
Package Description
SMALL OUTLINE, R-PSSO-G2
Number of Terminals
2
Power Dissipation-Max (Abs)
200 W
Rohs Code
Yes
Package Style
SMALL OUTLINE
Feedback Cap-Max (Crss)
185 pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Temperature-Max
175 °C
CEB14A04 Documents
Download datasheets CEB14A04
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