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Omron_EE-SJ3-D
Omron_EE-SJ3-D
Omron

EE-SJ3-D  

Sensors
Omron
EE-SJ3-D
54-EE-SJ3-D
Omron-EE-SJ3-D-datasheet-793764.pdf
Omron-EE-SJ3-D-datasheets-793764.pdf
SENSOR OPT SLOT PHOTOTRAN PCB MT
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    Description Tech Specifications Documents Shopping Guide

    EE-SJ3-D Description

    Omron EE-SJ3 Serie

    Tech Specifications

    Unit Weight
    0.092422 oz
    Output Type
    Phototransistor
    Response Time
    4µs, 4µs
    Sensing Distance
    0.134" (3.4mm)
    Maximum Collector Current
    20 mA
    Output Configuration
    Phototransistor
    Sensing Method
    Through-Beam
    Fall Time
    4 us
    Product Status
    Active
    Voltage - Collector Emitter Breakdown (Max)
    30 V
    RoHS
    RoHS Compliant
    Vf - Forward Voltage
    1.2 V
    Vr - Reverse Voltage
    4 V
    Package / Case
    PCB Mount
    REACH Status
    REACH Affected
    Mfr
    Omron Electronics Inc-EMC Div
    Height
    10.4 mm
    Maximum Operating Temperature
    + 85 C
    Width
    6.2 mm
    Slot Width
    3.4 mm
    RoHS Status
    ROHS3 Compliant
    Moisture Sensitivity Level (MSL)
    Not Applicable
    Mounting Style
    Through Hole
    Operating Temperature
    -25°C ~ 85°C
    Aperture Width
    0.2 mm
    Termination Style
    PCB
    Current - Collector (Ic) (Max)
    20 mA
    ECCN
    EAR99
    Mounting Type
    Through Hole
    Wavelength
    940 nm
    Minimum Operating Temperature
    - 25 C
    Series
    EE-SJ3
    Type
    Unamplified
    Rise Time
    4 us
    Length
    13.6 mm
    Collector- Emitter Voltage VCEO Max
    30 V
    HTSUS
    8541.49.8000
    Package
    Tube
    Pd - Power Dissipation
    100 mW
    USHTS
    8541498000
    Current - DC Forward (If) (Max)
    50 mA
    Base Product Number
    EE-SJ3

    EE-SJ3-D Documents

    Download datasheets EE-SJ3-D

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