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Excelics Semiconductor Inc
EPA060B-70
AC DC DC Modules
EPA060B-70
55-EPA060B-70
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, 0.070 INCH, CERAMIC PACKAGE-4
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Tech Specifications
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Configuration
SINGLE
Transistor Element Material
SILICON
Transistor Application
AMPLIFIER
Surface Mount
YES
Drain Current-Max (ID)
0.11 A
Part Life Cycle Code
Obsolete
Terminal Position
UNSPECIFIED
JESD-30 Code
X-CXMW-F4
DS Breakdown Voltage-Min
10 V
Package Shape
UNSPECIFIED
Terminal Form
FLAT
Operating Mode
DEPLETION MODE
Number of Elements
1
Highest Frequency Band
KU BAND
ECCN Code
EAR99
HTS Code
8541.21.00.95
Additional Feature
HIGH RELIABILITY
Pin Count
4
Package Description
MICROWAVE, X-CXMW-F4
Number of Terminals
4
Package Style
MICROWAVE
FET Technology
HETERO-JUNCTION
Power Dissipation Ambient-Max
0.78 W
Operating Temperature-Max
150 °C
EPA060B-70 Documents
Download datasheets EPA060B-70
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