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KDT00030ATR
Sensors
KDT00030ATR
54-KDT00030ATR
SENSOR PHOTO 630NM TOP VIEW 2SMD
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
8541.49.70.80
Viewing Angle
-
Maximum Collector-Emitter Voltage (V)
6
ECCN (US)
EAR99
PPAP
No
Current - Dark (Id) (Max)
40 nA
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
6 V
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Supplier Package
Chip LED
Package / Case
2-SMD, J-Lead
Phototransistor Type
Phototransistor
REACH Status
REACH Unaffected
Mfr
onsemi
Maximum Collector-Emitter Saturation Voltage (V)
4.6(Typ)
Polarity
NPN
Lens Shape Type
Flat
EU RoHS
Compliant
Maximum Dark Current (nA)
40
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Operating Temperature
-40°C ~ 85°C (TA)
Current - Collector (Ic) (Max)
1.1 mA
ECCN
EAR99
Package Length
1.7
Orientation
Top View
Mounting Type
Surface Mount
Wavelength
630nm
Pin Count
2
Mounting
Surface Mount
Series
-
Type
Chip
Viewing Orientation
Top View
Part Status
Active
Peak Wavelength (nm)
630
HTSUS
8541.49.7080
Package
Tape & Reel (TR)
Package Width
0.8
Maximum Light Current (uA)
1100(Typ)
Base Product Number
KDT00030
KDT00030ATR Documents
Download datasheets KDT00030ATR
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