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Marktech Optoelectronics
MTD8600N4-T
Sensors
MTD8600N4-T
54-MTD8600N4-T
Phototransistors Photo Diode 880nm
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Tech Specifications
Mounting Style
Through Hole
Maximum On-State Collector Current
50 mA
Collector-Emitter Breakdown Voltage
30 V
ECCN
EAR99
Fall Time
10 us
RoHS
RoHS Compliant
Wavelength
880 nm
Minimum Operating Temperature
- 30 C
Rise Time
10 us
Package / Case
TO-18-2
Length
4.65 mm
Half Intensity Angle Degrees
24 deg
Collector-Emitter Saturation Voltage
200 mV
Collector- Emitter Voltage VCEO Max
30 V
Height
6.2 mm
Maximum Operating Temperature
+ 100 C
Package
Bulk
Pd - Power Dissipation
250 mW
USHTS
8541491050
Width
4.65 mm
Dark Current
100 nA
Peak Wavelength
880 nm
MTD8600N4-T Documents
Download datasheets MTD8600N4-T
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