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OP506A
Sensors
OP506A
54-OP506A
Phototransistor Chip Silicon 935nm 2-Pin T-1 Bag
In Stock : 977
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
100
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Supplier Package
T-1
Phototransistor Type
Phototransistor
Package Height
5.08(Max) + 0.76
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
100
Diameter
4.19(Max)
Maximum Collector Current (mA)
20
Material
Silicon
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Type
Chip
Viewing Orientation
Top View
Lead Shape
Through Hole
Part Status
Active
Peak Wavelength (nm)
935
Package
Bag
Lens Color
Blue
Maximum Light Current (uA)
5950
OP506A Documents
Download datasheets OP506A
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