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OP593A
Sensors
OP593A
54-OP593A
Phototransistor IR Chip Silicon 890nm 2-Pin TO-18 Bag
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
8541.49.80.00
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
250
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Supplier Package
TO-18
Phototransistor Type
Phototransistor
Package Height
7.62(Max)
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
100
Diameter
5.72(Max)
Maximum Collector Current (mA)
50
Material
Silicon
Standard Package Name
TO
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Type
IR Chip
Viewing Orientation
Top View
Lead Shape
Through Hole
Part Status
Active
Peak Wavelength (nm)
890
Package
Bag
Lens Color
Blue
OP593A Documents
Download datasheets OP593A
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