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OPS666
Sensors
OPS666
54-OPS666
Phototransistor Chip Silicon 2-Pin T-1 Bag
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
100
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Supplier Package
T-1
Phototransistor Type
Phototransistor
Package Height
5.08(Max) + 0.76
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
100
Diameter
4.19(Max)
Material
Silicon
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Type
Chip
Viewing Orientation
Top View
Lead Shape
Through Hole
Part Status
Active
Package
Bag
Maximum Light Current (uA)
10000
OPS666 Documents
Download datasheets OPS666
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