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QSD123A4R0
Sensors
QSD123A4R0
54-QSD123A4R0
SENSOR PHOTO 880NM TOP VIEW RAD
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
30 V
Automotive
No
Supplier Package
T-1 3/4
Package / Case
Radial, 5mm Dia (T 1 3/4)
REACH Status
REACH Unaffected
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Lens Shape Type
Domed
EU RoHS
Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
Operating Temperature
-
Current - Collector (Ic) (Max)
16 mA
Maximum Collector Current (mA)
25
Maximum Fall Time (ns)
7000(Typ)
ECCN
EAR99
Orientation
Top View
Mounting Type
Through Hole
Wavelength
880nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Through Hole
Viewing Orientation
Top View
Lead Shape
Through Hole
Peak Wavelength (nm)
880
HTSUS
8541.49.7080
Package
Tape & Reel (TR)
Lens Color
Black Transparent
Maximum Light Current (uA)
16000
PCB changed
2
HTS
8541.49.80.00
Viewing Angle
24°
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
100
Current - Dark (Id) (Max)
100 nA
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Phototransistor Type
Phototransistor
Package Height
8.77
Mfr
onsemi
Polarity
NPN
Maximum Dark Current (nA)
100
Diameter
6.1(Max)
RoHS Status
ROHS3 Compliant
Maximum Rise Time (ns)
7000(Typ)
Material
Silicon
Series
-
Type
IR Chip
Half Intensity Angle Degrees (°)
12
Power - Max
100 mW
Part Status
Active
Base Product Number
QSD123
QSD123A4R0 Documents
Download datasheets QSD123A4R0
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