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SFH309-5/6-Z
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SFH309-5/6-Z
54-SFH309-5/6-Z
Phototransistor Chip Silicon 860nm 2-Pin T-1
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SFH309-5/6-Z Description
Phototransistor Chip Silicon 860nm 2-Pin T-1
Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
Maximum Collector-Emitter Voltage (V)
35
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
165
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Supplier Package
T-1
Phototransistor Type
Phototransistor
Package Height
5.2(Max)
Maximum Collector-Emitter Saturation Voltage (V)
0.2
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
200
Diameter
4(Max)
Maximum Rise Time (ns)
8000/9000
Maximum Collector Current (mA)
15
Maximum Fall Time (ns)
8000/9000
Material
Silicon
Pin Count
2
Mounting
Through Hole
Type
Chip
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
24
Lead Shape
Through Hole
Peak Wavelength (nm)
860
Maximum Light Current (uA)
7200/11200
SFH309-5/6-Z Documents
Download datasheets SFH309-5/6-Z
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