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ams OSRAM_SFH309FA-4/5
ams OSRAM_SFH309FA-4/5
ams OSRAM

SFH309FA-4/5

Sensors
ams OSRAM
SFH309FA-4/5
54-SFH309FA-4/5
ams OSRAM-SFH309FA-4/5-datasheet-790269.pdf
ams OSRAM-SFH309FA-4/5-datasheets-790269.pdf
Phototransistor IR Chip Silicon 900nm 2-Pin T-1
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Description Tech Specifications Documents Shopping Guide

Tech Specifications

Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
35
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
165
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Supplier Package
T-1
Phototransistor Type
Phototransistor
Package Height
5.2(Max)
Maximum Collector-Emitter Saturation Voltage (V)
0.2
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
200
Diameter
4(Max)
Maximum Rise Time (ns)
7000/8000
Maximum Collector Current (mA)
15
Maximum Fall Time (ns)
7000/8000
Material
Silicon
Pin Count
2
Cut-Off Filter
Visible Cut-off
Mounting
Through Hole
Type
IR Chip
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
24
Lead Shape
Through Hole
Part Status
Active
Peak Wavelength (nm)
900
Maximum Light Current (uA)
4500/7200

SFH309FA-4/5 Documents

Download datasheets SFH309FA-4/5

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