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ams OSRAM_SFH313FA-2/3
ams OSRAM_SFH313FA-2/3
ams OSRAM

SFH313FA-2/3  

Sensors
ams OSRAM
SFH313FA-2/3
54-SFH313FA-2/3
ams OSRAM-SFH313FA-2/3-datasheet-790264.pdf
ams OSRAM-SFH313FA-2/3-datasheets-790264.pdf
No Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4
In Stock : 20

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Description Tech Specifications Documents Shopping Guide

SFH313FA-2/3 Description

No Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4

Tech Specifications

Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
8541.49.70.40
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
200
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Supplier Package
T-1 3/4
Phototransistor Type
Phototransistor
Package Height
9(Max)
Maximum Collector-Emitter Saturation Voltage (V)
0.15
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
200
Diameter
5.9(Max)
Maximum Rise Time (ns)
18000
Maximum Collector Current (mA)
50
Maximum Fall Time (ns)
20000
Material
Silicon
Maximum Emitter-Collector Voltage (V)
7
Pin Count
2
Cut-Off Filter
Visible Cut-off
Mounting
Through Hole
Type
IR Chip
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
20
Lead Shape
Through Hole
Part Status
Active
Peak Wavelength (nm)
850
Maximum Light Current (uA)
8000/12500

SFH313FA-2/3 Documents

Download datasheets SFH313FA-2/3

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