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SFH3310-Z
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SFH3310-Z
54-SFH3310-Z
Phototransistor Chip Silicon 570nm 2-Pin
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SFH3310-Z Description
Phototransistor Chip Silicon 570nm 2-Pin
Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
Maximum Collector-Emitter Voltage (V)
5.5
ECCN (US)
EAR99
PPAP
No
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Phototransistor Type
Phototransistor
Package Height
3.1(Max)
Polarity
NPN
Lens Shape Type
Flat
EU RoHS
Compliant
Maximum Dark Current (nA)
3
Diameter
4(Max)
Maximum Collector Current (mA)
20
Material
Silicon
Maximum Emitter-Collector Voltage (V)
0.5
Pin Count
2
Mounting
Through Hole
Type
Chip
Viewing Orientation
Top View
Half Intensity Angle Degrees (°)
150
Part Status
Active
Peak Wavelength (nm)
570
Maximum Light Current (uA)
8
SFH3310-Z Documents
Download datasheets SFH3310-Z
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