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TEKT5400S-ASZ
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TEKT5400S-ASZ
54-TEKT5400S-ASZ
Phototransistor IR Chip Silicon 920nm 2-Pin Tape
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Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
70
ECCN (US)
EAR99
PPAP
No
Maximum Power Dissipation (mW)
150
RoHS
RoHS Compliant
Automotive
No
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Package Height
5
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Polarity
NPN
Lens Shape Type
Domed
EU RoHS
Compliant
Maximum Dark Current (nA)
100
Maximum Collector Current (mA)
100
ECCN
EAR99
Material
Silicon
Package Length
5
Maximum Emitter-Collector Voltage (V)
7
Pin Count
2
Cut-Off Filter
Visible Cut-off
Mounting
Through Hole
Type
IR Chip
Viewing Orientation
Side View
Half Intensity Angle Degrees (°)
74
Part Status
Active
Peak Wavelength (nm)
920
Package
Tape
Package Width
2.65
USHTS
8541497080
Maximum Light Current (uA)
4000
TEKT5400S-ASZ Documents
Download datasheets TEKT5400S-ASZ
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