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TEMT1000
Sensors
TEMT1000
54-TEMT1000
Phototransistor IR Chip Silicon 950nm 2-Pin SMD T/R
In Stock : 9116
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.007729 oz
Fabrication Technology
NPN Transistor
Light Current
7 mA
Product
Phototransistors
PPAP
No
Fall Time
2.3 us
RoHS
RoHS Compliant
Automotive
No
Supplier Package
SMD
Package / Case
SMD-2
Maximum Collector-Emitter Saturation Voltage (V)
0.3
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
950 nm
Collector-Emitter Breakdown Voltage
70 V
Maximum Collector Current (mA)
50
ECCN
EAR99
Standard Package Name
SMD
Wavelength
880 nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Surface Mount
Lens Color/Style
Black
Rise Time
2 us
Moisture Sensitive
Yes
Viewing Orientation
Top View
Peak Wavelength (nm)
950
Collector- Emitter Voltage VCEO Max
70 V
Package
Tape and Reel
USHTS
8541497080
Maximum Light Current (uA)
7000(Typ)
Maximum On-State Collector Current
100 mA
PCB changed
2
HTS
8541.49.70.80
Maximum Collector-Emitter Voltage (V)
70(Min)
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
100
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Package Height
2.7
Collector-Emitter Saturation Voltage
300 mV
Polarity
NPN
Height
2.7 mm
Maximum Operating Temperature
+ 85 C
Maximum Dark Current (nA)
200
Width
2 mm
Mounting Style
SMD/SMT
Material
Silicon
Package Length
2.5
Minimum Operating Temperature
- 40 C
Cut-Off Filter
Visible Cut-off
Series
TEMT
Type
IR Chip
Half Intensity Angle Degrees (°)
30
Length
2.5 mm
Half Intensity Angle Degrees
15 deg
Part Status
Active
Package Width
2
Pd - Power Dissipation
100 mW
Dark Current
200 nA
TEMT1000 Documents
Download datasheets TEMT1000
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