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TEMT1040
Sensors
TEMT1040
54-TEMT1040
Phototransistors Axial leads 730-1000nm +/-15 deg
In Stock : 680
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Tech Specifications
Unit Weight
0.001811 oz
Maximum On-State Collector Current
100 mA
Light Current
7 mA
Product
Phototransistors
Fall Time
2.3 us
RoHS
RoHS Compliant
Package / Case
SMD-2
Collector-Emitter Saturation Voltage
300 mV
Height
2.7 mm
Maximum Operating Temperature
+ 85 C
Width
2 mm
Peak Wavelength
950 nm
Mounting Style
SMD/SMT
Collector-Emitter Breakdown Voltage
70 V
ECCN
EAR99
Wavelength
880 nm
Minimum Operating Temperature
- 40 C
Series
TEMT
Lens Color/Style
Black
Type
IR Chip
Rise Time
2 us
Moisture Sensitive
Yes
Length
2.5 mm
Half Intensity Angle Degrees
15 deg
Collector- Emitter Voltage VCEO Max
70 V
Package
Bulk
Pd - Power Dissipation
100 mW
USHTS
8541499500
Dark Current
200 nA
TEMT1040 Documents
Download datasheets TEMT1040
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