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VEMT2000X01
Sensors
VEMT2000X01
54-VEMT2000X01
Phototransistor IR Chip Silicon 860nm Automotive AEC-Q101 2-Pin SMD T/R
In Stock : 9649
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Tech Specifications
Number of Channels per Chip
1
Unit Weight
0.005722 oz
Fabrication Technology
NPN Transistor
Light Current
6 mA
Product
Phototransistors
PPAP
Unknown
RoHS
RoHS Compliant
Automotive
Yes
Supplier Package
SMD
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Lens Shape Type
Domed
EU RoHS
Compliant
Peak Wavelength
860 nm
Collector-Emitter Breakdown Voltage
20 V
Maximum Collector Current (mA)
50
ECCN
EAR99
Standard Package Name
SMD
Wavelength
860 nm
Maximum Emitter-Collector Voltage (V)
7
Pin Count
2
Mounting
Surface Mount
Qualification
AEC-Q100
Moisture Sensitive
Yes
Viewing Orientation
Top View
Peak Wavelength (nm)
860
Collector- Emitter Voltage VCEO Max
20 V
Package
Tape and Reel
Lens Color
Black
USHTS
8541497080
Maximum Light Current (uA)
9000
PCB changed
2
HTS
COMPONENTS
Maximum Collector-Emitter Voltage (V)
20
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
100
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Phototransistor Type
Phototransistor
Package Height
2.77
Collector-Emitter Saturation Voltage
400 mV
Polarity
NPN
Maximum Operating Temperature
+ 100 C
Maximum Dark Current (nA)
100
Material
Silicon
Package Length
2.3
Minimum Operating Temperature
- 40 C
Series
VEMT
Type
IR Chip
Half Intensity Angle Degrees (°)
30
Half Intensity Angle Degrees
15 deg
Part Status
Active
Package Width
2.3
Pd - Power Dissipation
100 mW
Dark Current
100 nA
VEMT2000X01 Documents
Download datasheets VEMT2000X01
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