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VEMT3704F-GS08
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VEMT3704F-GS08
54-VEMT3704F-GS08
Phototransistors NPN Phototransistor PLCC-2
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Tech Specifications
Mounting Style
SMD/SMT
Maximum On-State Collector Current
50 mA
Collector-Emitter Breakdown Voltage
70 V
Light Current
500 uA
ECCN
EAR99
Product
Phototransistors
Fall Time
6 us
RoHS
RoHS Compliant
Wavelength
940 nm
Minimum Operating Temperature
- 40 C
Series
VEMT
Type
Silicon NPN Phototransistor
Rise Time
6 us
Package / Case
PLCC-2
Collector-Emitter Saturation Voltage
150 mV
Collector- Emitter Voltage VCEO Max
70 V
Maximum Operating Temperature
+ 100 C
Package
Reel
Pd - Power Dissipation
100 mW
USHTS
8541498000
Dark Current
1 nA
VEMT3704F-GS08 Documents
Download datasheets VEMT3704F-GS08
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