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FODM214AV
Sensors
FODM214AV
54-FODM214AV
Phototransistors 4SO TR VDE OPTION
In Stock : 3150
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FODM214AV Description
onsemi FODM214 Serie, Phototransistors
Tech Specifications
Mounting Style
SMD/SMT
Maximum On-State Collector Current
50 mA
Collector-Emitter Breakdown Voltage
80 V
ECCN
EAR99
Product
Phototransistors
Fall Time
3 us
RoHS
RoHS Compliant
Minimum Operating Temperature
- 55 C
Series
FODM214
Type
Phototransistor Optocoupler
Rise Time
3 us
Package / Case
MFP-4
Collector-Emitter Saturation Voltage
400 mV
Collector- Emitter Voltage VCEO Max
80 V
Maximum Operating Temperature
+ 110 C
Package
Tube
Pd - Power Dissipation
150 mW
USHTS
8541498000
Dark Current
100 nA
FODM214AV Documents
Download datasheets FODM214AV
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