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QTLP610CPDTR
Sensors
QTLP610CPDTR
54-QTLP610CPDTR
SENSOR PHOTO 860NM SIDE VIEW SMD
In Stock : 2099
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QTLP610CPDTR Description
SENSOR PHOTO 860NM SIDE VIEW SMD
Tech Specifications
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
30 V
Automotive
No
Supplier Package
SMD
Package / Case
2-SMD, No Lead
REACH Status
REACH Unaffected
Maximum Collector-Emitter Saturation Voltage (V)
0.4
Lens Shape Type
Domed
EU RoHS
Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Operating Temperature
-25°C ~ 85°C (TA)
Current - Collector (Ic) (Max)
500 µA
Maximum Collector Current (mA)
3.5
Maximum Fall Time (ns)
15000(Typ)
ECCN
EAR99
Orientation
Side View
Mounting Type
Surface Mount
Standard Package Name
SMD
Wavelength
860nm
Maximum Emitter-Collector Voltage (V)
5
Pin Count
2
Mounting
Surface Mount
Viewing Orientation
Side View
Lead Shape
No Lead
Peak Wavelength (nm)
860
HTSUS
8541.49.7080
Package
Tape & Reel (TR)
Lens Color
Water Clear
Maximum Light Current (uA)
500(Typ)
PCB changed
2
HTS
8541407080
Viewing Angle
160°
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
Maximum Power Dissipation (mW)
75
Current - Dark (Id) (Max)
100 nA
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Phototransistor Type
Phototransistor
Package Height
1.1(Max)
Mfr
onsemi
Polarity
NPN
Maximum Dark Current (nA)
100
RoHS Status
ROHS3 Compliant
Maximum Rise Time (ns)
15000(Typ)
Material
Silicon
Package Length
3.2(Max)
Series
-
Type
IR Chip
Half Intensity Angle Degrees (°)
80
Power - Max
75 mW
Part Status
Active
Package Width
2.2(Max)
Base Product Number
QTLP610
QTLP610CPDTR Documents
Download datasheets QTLP610CPDTR
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